Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

<p>Abstract</p> <p>The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried...

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Detalhes bibliográficos

Principais autores:	Tchernycheva M, Dubrovskii VG, Sibirev NV, Cirlin GE, Sartel C, Harmand JC, Glas F, Zhang X
Formato:	Artigo
Idioma:	Inglês
Publicado em:	SpringerOpen 2010-01-01
Colecção:	Nanoscale Research Letters
Assuntos:	Inclined GaAs nanowires Molecular beam epitaxy Surface diffusion
Acesso em linha:	http://dx.doi.org/10.1007/s11671-010-9698-7
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