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XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high conc...

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Autori principali: Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Igor E. Eliseev, Sergey V. Fedina, Georgiy A. Sapunov, Stanislav A. Udovenko, Liliia N. Dvoretckaia, Demid A. Kirilenko, Roman G. Burkovsky, Ivan S. Mukhin
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI AG 2021-04-01
Serie:Nanomaterials
Soggetti:
GaP
nanowire
wurtzite
zincblende
XRD
Rietveld refinement
Accesso online:https://www.mdpi.com/2079-4991/11/4/960
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