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New Submicron Low Gate Leakage In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.7</sub>Ga<sub>0.3</sub>As pHEMT for Low-Noise Applications

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Mohamed Fauzi Packeer Mohamed, Mohamad Faiz Mohamed Omar, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Mohd Hendra Hairi, Shaili Falina, Mohd Syamsul Nasyriq Samsol Baharin
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2021-11-01
Schriftenreihe:Micromachines
Schlagworte:
2DEG
III-V material
InAlAs
InGaAs
InP
LNA
Online-Zugang:https://www.mdpi.com/2072-666X/12/12/1497
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