New Submicron Low Gate Leakage In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.7</sub>Ga<sub>0.3</sub>As pHEMT for Low-Noise Applications
Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature...
保存先:
| 主要な著者: | , , , , , , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI AG
2021-11-01
|
| シリーズ: | Micromachines |
| 主題: | |
| オンライン･アクセス: | https://www.mdpi.com/2072-666X/12/12/1497 |
| タグ: |
タグなし, このレコードへの初めてのタグを付けませんか!
|