Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor

Abstract Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can e...

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Detalhes bibliográficos

Principais autores:	Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay‐Rong Chang, Pan He, Jian Shen
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2025-05-01
coleção:	Advanced Electronic Materials
Assuntos:	Berry curvature dipole nonlinear Hall effect rectification effect voltage responsivity Weyl semiconductor
Acesso em linha:	https://doi.org/10.1002/aelm.202400648
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