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Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor

Abstract Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can e...

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Principais autores: Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay‐Rong Chang, Pan He, Jian Shen
Format: Artigo
Sprog:Inglês
Udgivet: Wiley-VCH 2025-05-01
Serier:Advanced Electronic Materials
Fag:
Berry curvature dipole
nonlinear Hall effect
rectification effect
voltage responsivity
Weyl semiconductor
Online adgang:https://doi.org/10.1002/aelm.202400648
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