Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor

Abstract Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can e...

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Autors principals:	Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay‐Rong Chang, Pan He, Jian Shen
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-05-01
Col·lecció:	Advanced Electronic Materials
Matèries:	Berry curvature dipole nonlinear Hall effect rectification effect voltage responsivity Weyl semiconductor
Accés en línia:	https://doi.org/10.1002/aelm.202400648
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