High-frequency characteristics of ultra-short gate MoS2 transistors
Short channel transistors are gaining attention for high-frequency applications. MoS _2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance. This study employs the nonequilibrium Green’s function formalism to analyze their electronic pr...
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| Hoofdauteurs: | , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
IOP Publishing
2025-01-01
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| Reeks: | Applied Physics Express |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.35848/1882-0786/adbcf5 |
| Tags: |
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