High-Performance CVD Bilayer MoS₂ Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

Two-dimensional (2D) MoS₂ have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS₂ exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable...

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Detalhes bibliográficos

Principais autores:	Qingguo Gao, Chongfu Zhang, Kaiqiang Yang, Xinjian Pan, Zhi Zhang, Jianjun Yang, Zichuan Yi, Feng Chi, Liming Liu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-04-01
coleção:	Micromachines
Assuntos:	bilayer MoS<sub>2</sub> CVD high-frequency transistors flexible electronics
Acesso em linha:	https://www.mdpi.com/2072-666X/12/4/451
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