A Horizontal-Gate Monolayer MoS<sub>2</sub> Transistor Based on Image Force Barrier Reduction
Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication pr...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2019-09-01
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| coleção: | Nanomaterials |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2079-4991/9/9/1245 |
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