Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes
An ultralow specific on-resistance (<inline-formula> <tex-math notation="LaTeX">${R} _{\mathrm{ on,sp}}$ </tex-math></inline-formula>) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations and experiments. The proposed ALDMOS features two separated integrated diodes (SID) abov...
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| Главные авторы: | , , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
IEEE
2021-01-01
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| Серии: | IEEE Journal of the Electron Devices Society |
| Предметы: | |
| Online-ссылка: | https://ieeexplore.ieee.org/document/9546941/ |
| Метки: |
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