Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the Z...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Taylor & Francis Group
2023-12-01
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| Col·lecció: | Science and Technology of Advanced Materials |
| Matèries: | |
| Accés en línia: | https://www.tandfonline.com/doi/10.1080/14686996.2023.2212112 |
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