Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the Z...
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| Автори: | , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Taylor & Francis Group
2023-12-01
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| Серія: | Science and Technology of Advanced Materials |
| Предмети: | |
| Онлайн доступ: | https://www.tandfonline.com/doi/10.1080/14686996.2023.2212112 |
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