Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors

The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the Z...

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Autori principali:	Song Lee, Jeong-In Lee, Chang-Hyun Kim, Jin-Hyuk Kwon, Jonghee Lee, Amos Amoako Boampong, Min-Hoi Kim
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Taylor & Francis Group 2023-12-01
Serie:	Science and Technology of Advanced Materials
Soggetti:	Zirconium acetylacetonates solution-processes charge-trap layers thin-film memory transistors multi-bits
Accesso online:	https://www.tandfonline.com/doi/10.1080/14686996.2023.2212112
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