Côd QR

Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors

The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the Z...

Disgrifiad llawn

Wedi'i Gadw mewn:
Prif Awduron: Song Lee, Jeong-In Lee, Chang-Hyun Kim, Jin-Hyuk Kwon, Jonghee Lee, Amos Amoako Boampong, Min-Hoi Kim
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Taylor & Francis Group 2023-12-01
Cyfres:Science and Technology of Advanced Materials
Pynciau:
Zirconium acetylacetonates
solution-processes
charge-trap layers
thin-film memory transistors
multi-bits
Mynediad Ar-lein:https://www.tandfonline.com/doi/10.1080/14686996.2023.2212112
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

Eitemau Tebyg