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Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration

Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing. Developing programming schemes that balance resistance fine-tuning with short-term stability is crucial for improving the...

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Autori principali: Xiaohua Liu, Yang Chen, Nils Kopperberg, Oliver Solfronk, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser, Stefan Wiefels
Natura: Artigo
Lingua:Inglês
Pubblicazione: IEEE 2025-01-01
Serie:IEEE Access
Soggetti:
Redox-based resistive random-access memory (ReRAM)
one-transistor-one-resistor (1T1R)
programming schemes
short-term stability
simulation
kinetic Monte Carlo (KMC)
Accesso online:https://ieeexplore.ieee.org/document/10909499/
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