Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
In this work, we report hot carrier-induced degradation in normally-on AlGaN/GaN high electron mobility transistors (HEMTs) with a 0.25-μm gate. To analyze the hot carrier effect, the semi-on state stress test was carried out and the DC and pulsed I-V characteristics were analyzed. The stress condit...
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| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
The Korean Institute of Electromagnetic Engineering and Science
2022-05-01
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| Seri Bilgileri: | Journal of Electromagnetic Engineering and Science |
| Konular: | |
| Online Erişim: | http://jees.kr/upload/pdf/jees-2022-3-r-89.pdf |
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