Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs

In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperature ranging from 40 K to 260 K, and the saturation...

Descripció completa

Dades bibliogràfiques

Autors principals:	Qiang Chen, Y. Q. Chen, Chang Liu, Zhiyuan He, Yuan Chen, K. W. Geng, Y. J. He, W. Y. Chen
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2024-01-01
Col·lecció:	IEEE Journal of the Electron Devices Society
Matèries:	Low temperature AlGaN/GaN HEMTs LFN traps
Accés en línia:	https://ieeexplore.ieee.org/document/10643171/
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!