Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs

In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperature ranging from 40 K to 260 K, and the saturation...

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Detalles Bibliográficos

Principais autores:	Qiang Chen, Y. Q. Chen, Chang Liu, Zhiyuan He, Yuan Chen, K. W. Geng, Y. J. He, W. Y. Chen
Formato:	Artigo
Idioma:	Inglês
Publicado:	IEEE 2024-01-01
Series:	IEEE Journal of the Electron Devices Society
Assuntos:	Low temperature AlGaN/GaN HEMTs LFN traps
Acceso en liña:	https://ieeexplore.ieee.org/document/10643171/
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