Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs

In this work, we report hot carrier-induced degradation in normally-on AlGaN/GaN high electron mobility transistors (HEMTs) with a 0.25-μm gate. To analyze the hot carrier effect, the semi-on state stress test was carried out and the DC and pulsed I-V characteristics were analyzed. The stress condit...

תיאור מלא

מידע ביבליוגרפי

Principais autores:	Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	The Korean Institute of Electromagnetic Engineering and Science 2022-05-01
סדרה:	Journal of Electromagnetic Engineering and Science
נושאים:	algan/gan hemt degradation hot carrier effect reliability trap
גישה מקוונת:	http://jees.kr/upload/pdf/jees-2022-3-r-89.pdf
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!