Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs
The poor interface quality of the Silicon Carbide/oxide (SiC/SiO<sub>2</sub>) interface severely degrades the electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts improved mobility...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2021-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9551271/ |
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