Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention
This paper presents a comprehensive investigation on the self-sustained oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-sustained oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investiga...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2019-06-01
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| Col·lecció: | Energies |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/1996-1073/12/11/2211 |
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