High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled v...

詳細記述

書誌詳細

主要な著者:	Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2021-06-01
シリーズ:	Nanomaterials
主題:	scanning probe microscopy scanning capacitance microscopy 4H-SiC power-MOSFET
オンライン･アクセス:	https://www.mdpi.com/2079-4991/11/6/1626
タグ:	タグ追加 タグなし, このレコードへの初めてのタグを付けませんか!