High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled v...

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Bibliografiske detaljer

Principais autores:	Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2021-06-01
Serier:	Nanomaterials
Fag:	scanning probe microscopy scanning capacitance microscopy 4H-SiC power-MOSFET
Online adgang:	https://www.mdpi.com/2079-4991/11/6/1626
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