Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films
<p>Abstract</p> <p>Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffr...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
SpringerOpen
2009-01-01
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| Serie: | Nanoscale Research Letters |
| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.1007/s11671-009-9309-7 |
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