Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications

This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications. We consider five key design variables and two settings (PAs...

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Үндсэн зохиолчид:	Rafael Perez Martinez, Stephen Boyd, Srabanti Chowdhury
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IEEE 2025-01-01
Цуврал:	IEEE Access
Нөхцлүүд:	Derivative-free optimization (DFO) gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier (PA) low-noise amplifier (LNA) robust optimization
Онлайн хандалт:	https://ieeexplore.ieee.org/document/10892100/
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!