High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication

In the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) wit...

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Bibliografiske detaljer

Principais autores:	Omar S. Abdulwahid, Ahmad N. Abdulfattah, Saad G. Muttlak, Mohammadreza Sadeghi, Mohamed Missous
Format:	Artigo
Sprog:	Inglês
Udgivet:	KeAi Communications Co., Ltd. 2025-12-01
Serier:	Journal of Electronic Science and Technology
Fag:	Low noise amplifier Noise figure pHEMT characterization Transistor modeling Wireless communication
Online adgang:	http://www.sciencedirect.com/science/article/pii/S1674862X25000394
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