Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications
This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications. We consider five key design variables and two settings (PAs...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2025-01-01
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| Col·lecció: | IEEE Access |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/10892100/ |
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