A Low-Power Read-Decoupled Radiation-Hardened 16T SRAM for Space Applications

Advancements in CMOS technology have significantly reduced both transistor dimensions and inter-device spacing, leading to a lower critical charge at sensitive nodes. As a result, SRAM cells used in space applications have become increasingly vulnerable to single-event upset (SEU) caused by the hars...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Sung-Jun Lim, Sung-Hun Jo
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2025-06-01
Цуврал:	Applied Sciences
Нөхцлүүд:	radiation-hardened single-event upset soft error space applications static random-access memory
Онлайн хандалт:	https://www.mdpi.com/2076-3417/15/12/6536
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!