Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments
As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur, flipping stored bits. Furthermore, with aggressi...
Kaydedildi:
| Asıl Yazarlar: | , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2025-10-01
|
| Seri Bilgileri: | Micromachines |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2072-666X/16/11/1212 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|