A Novel Low-Power and Soft Error Recovery 10T SRAM Cell

In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors. If radiation particles hit the sensitive nodes of a standard 6T SRAM cell, the data stored in the c...

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Bibliografiske detaljer

Principais autores:	Changjun Liu, Hongxia Liu, Jianye Yang
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2023-04-01
Serier:	Micromachines
Fag:	soft error single-event upset (SEU) radiation hardness low power
Online adgang:	https://www.mdpi.com/2072-666X/14/4/845
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