Oxidation kinetics of silicon strained by silicon germanium
This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Institute of Telecommunications
2023-06-01
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| Col·lecció: | Journal of Telecommunications and Information Technology |
| Matèries: | |
| Accés en línia: | https://jtit.pl/jtit/article/view/824 |
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