The electronic properties of boron-doped germanium nanocrystals films
Abstract Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructur...
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| 主要な著者: | , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2023-09-01
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| シリーズ: | Discover Nano |
| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1186/s11671-023-03893-7 |
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