High figure-of-merit SOI power LDMOS for power integrated circuits
The structural modifications in the conventional power laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS) are carried out to improve the breakdown voltage, on-resistance, gate-charge and figure-of-merits of the device with reduced cell pitch. The modified device has planer...
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| Autores principales: | , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Elsevier
2015-06-01
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| Colección: | Engineering Science and Technology, an International Journal |
| Materias: | |
| Acceso en línea: | http://www.sciencedirect.com/science/article/pii/S2215098614000895 |
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