Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions

This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at...

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Detalles Bibliográficos

Principais autores:	Giuseppe Pennisi, Mario Pulvirenti, Luciano Salvo, Angelo Giuseppe Sciacca, Salvatore Cascino, Antonio Laudani, Nunzio Salerno, Santi Agatino Rizzo
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2024-05-01
Series:	Energies
Assuntos:	body diode MOSFET switching power electronics power electronics devices reverse recovery SiC MOSFETs
Acceso en liña:	https://www.mdpi.com/1996-1073/17/11/2651
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