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Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V to −0.02 V due to the buildup of deep trap concentr...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton
Format: Artigo
Sprache:Inglês
Veröffentlicht: AIP Publishing LLC 2019-06-01
Schriftenreihe:APL Materials
Online-Zugang:http://dx.doi.org/10.1063/1.5109025
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