Defects at the surface of β-Ga2O3 produced by Ar plasma exposure
Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V to −0.02 V due to the buildup of deep trap concentr...
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| Autors principals: | , , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2019-06-01
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| Col·lecció: | APL Materials |
| Accés en línia: | http://dx.doi.org/10.1063/1.5109025 |
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