In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching

We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and sharp edge definition with a contact resistance of 0.25 Ω·mm...

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Auteurs principaux:	Can Cao, Sheikh Ifatur Rahman, Chris Chae, Jinwoo Hwang, Chandan Joishi, Siddharth Rajan, Wu Lu
Format:	Artigo
Langue:	Inglês
Publié:	IOP Publishing 2025-01-01
Collection:	Applied Physics Express
Sujets:	GaN high electron mobility transistor ohmic contact regrowth in situ passivation selective etching
Accès en ligne:	https://doi.org/10.35848/1882-0786/adb09b
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