In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching
We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and sharp edge definition with a contact resistance of 0.25 Ω·mm...
Salvato in:
| Autori principali: | , , , , , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2025-01-01
|
| Serie: | Applied Physics Express |
| Soggetti: | |
| Accesso online: | https://doi.org/10.35848/1882-0786/adb09b |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|