In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching
We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and sharp edge definition with a contact resistance of 0.25 Ω·mm...
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| Hauptverfasser: | , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IOP Publishing
2025-01-01
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| Schriftenreihe: | Applied Physics Express |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.35848/1882-0786/adb09b |
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