Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (I on/I off)...
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| Asıl Yazarlar: | , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Portfolio
2022-10-01
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| Seri Bilgileri: | Scientific Reports |
| Online Erişim: | https://doi.org/10.1038/s41598-022-21092-9 |
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