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Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results in the increase of 2DEG electron mobility from 1180...

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Autori principali: Siheng Chen, Peng Cui, Mingsheng Xu, Zhaojun Lin, Xiangang Xu, Yuping Zeng, Jisheng Han
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI AG 2022-10-01
Serie:Crystals
Soggetti:
InAlN/GaN HEMT
electrical performance
bis(trifluoromethane) sulfonamide
electron mobility
scattering
Accesso online:https://www.mdpi.com/2073-4352/12/11/1521
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