Lattice-Matched InAlN/GaN D-Mode MIS-HEMT on SiC for High-Current Operation and Low-Loss 100-V Double-Pulse Switching

We report a large-periphery lattice-matched In0.164Al0.836N/GaN depletion-mode (D-mode) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) on a SiC substrate for high-current power switching. The stress-free InAlN barrier is lattice-matched to GaN, enabling scal...

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Hlavní autoři:	Shyh-Jer Huang, Tzy-Yu Shen, Yu-Chen Liu, Yung-Wei Chen, Jian-Kai Chen, Chun-Yu Lin, Zi-Hao Wang, Takashi Yoda, Takayuki Ohba, Meng-Chyi Wu, Yan-Kuin Su
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2026-01-01
Edice:	IEEE Access
Témata:	InAlN/GaN MIS-HEMT lattice-matched InAlN SiC substrate double-pulse switching high-current power device
On-line přístup:	https://ieeexplore.ieee.org/document/11421846/
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