Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results in the increase of 2DEG electron mobility from 1180...

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Hlavní autoři:	Siheng Chen, Peng Cui, Mingsheng Xu, Zhaojun Lin, Xiangang Xu, Yuping Zeng, Jisheng Han
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-10-01
Edice:	Crystals
Témata:	InAlN/GaN HEMT electrical performance bis(trifluoromethane) sulfonamide electron mobility scattering
On-line přístup:	https://www.mdpi.com/2073-4352/12/11/1521
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