Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD
It presents the structural and electrical characterization of rectangular and triangular barriers based on AlxGa1- xAs/GaAs heterostructures grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminum precursors were the organmetallic compounds trimethylgallium and trimethylaluminum, re...
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| Pubblicato in: | Superficies y vacío |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2010
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94215036003 |
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