Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic

MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grownby MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAsby MOCVD are the composition homogeneity of the layers and the oxygen and...

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Bibliográfalaš dieđut

Publikašuvnnas:	Superficies y vacío
Váldodahkkit:	J. Díaz Reyes, R. Castillo Ojeda, M. Galván Arellano, R. Peña Sierra
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2002
Fáttát:	Física, Astronomía y Matemáticas
Liŋkkat:	https://www.redalyc.org/articulo.oa?id=94201506
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