Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic
MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grownby MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAsby MOCVD are the composition homogeneity of the layers and the oxygen and...
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| Pubblicato in: | Superficies y vacío |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2002
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94201506 |
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