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Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD)
LT-MOCVD growth runs of GaN are conventionally used for the formation of the nucleation layers prior to epitaxial growth of GaN is substantially determined by the low temperature (LT) grown layers. Therefore, study of the LT runs is very important. One of the main concerns of the crystal growth is i...
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| Publicado en: | Superficies y vacío |
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| Autores principales: | , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201325 |
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