Influence of Si(110) misoriented substrates on the microstructure and photoreflectance of GaAs thin films deposited by MBE

We have grown GaAs layers by molecular beam epitaxy on Si(110) substrates with different tilted angles towards the[001] direction. The samples where characterized by atomic force microscopy (AFM), high resolution x-ray diffraction(HRXRD), and photoreflectance spectroscopy (PR). The surface morpholog...

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發表在:Superficies y vacío
Main Authors: M. A. Vidal, J. Luyo Alvarado, M. López López, M. Meléndez Lira
格式: Artigo
語言:Inglês
出版: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2000
主題:
Física, Astronomía y Matemáticas
MBE
Ray
GaAs on Si
heterostructures
photoreflectance
在線閱讀:https://www.redalyc.org/articulo.oa?id=94201009
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