Influence of Si(110) misoriented substrates on the microstructure and photoreflectance of GaAs thin films deposited by MBE
We have grown GaAs layers by molecular beam epitaxy on Si(110) substrates with different tilted angles towards the[001] direction. The samples where characterized by atomic force microscopy (AFM), high resolution x-ray diffraction(HRXRD), and photoreflectance spectroscopy (PR). The surface morpholog...
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| Yayımlandı: | Superficies y vacío |
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| Asıl Yazarlar: | , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| Konular: | |
| Online Erişim: | https://www.redalyc.org/articulo.oa?id=94201009 |
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